Electrons as particles and waves, Schrodinger's equation and illustrative solutions. Tunneling. Atomic structures, the exclusion principle and the periodic table. Bonds. Free electrons in metals, periodic potentials and energy bands.
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Crystal lattices and the structure of solids, with emphasis on seminconductors. Lattice vibartations. Electronic states and energy bands. Electrical and thermal conduction. Dielectic and optical properties. Semiconductor devices: diffusion, P-N junctions and diode behavior.
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Introduction to the fundamentals of common manufacturing processes and their interplay with the structure and properties of materials as they are transformed into products. Emphasis on process understanding and the key physical concepts and basic mathematical relationships involved in each of the processes discussed.
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The microscopic statistical mechanical foundations of the macroscopic thermodynamics of materials, with applications to ideal and non-ideal gases, electrons and phonons in solids, multicomponent solutions, phase equilibria in single and multicomponent systems, and capillarity.
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The free electron model; electron levels in periodic potentials. Classification of solids. Role of electronic structure in atomic bonding and atomic packing. Cohesion. Surfaces, interfaces and junction effects. Semiconductors. Transition-metal compounds. Amorphous solids. Liquid crystals. Colloids and soft materials.
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Study of phenomena underlying the evolution of structure across the relevant length and time scales in Materials. Structural defects. Drving forces, mechanisms and kinetics of structural change. Diffusional transport. Fundamentals of phase transformations. Crystallization. Evolution of microstructural features and patterns.
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Advanced thermodynamics with emphasis on phase equilibria, properties of solutions, and multicomponent systems.
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Introduction to transition mental oxides. Ligand field theory. Structural basis of magnetism.
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Review of elementary magnetostatics. Discussion of atomic origins of magnetism. Properties of ferro-, ferri-, para-, dia-, and antiferro- magnetics, and the theories that describe them. Magnetic phenomena, and magnetic materials in technological applications.
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Optical and electrical properties of FaN, ZnSe, SiC, and Diamond based semiconductor materials. Theory and practical application of wide-band materials in devices. Materials growth techniques of MOCVD, CVD, and MBE are discussed. Applications of these materials in blue lasers, LEDs (UV, blue, green, and white) emphasized.
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Introduction into the physics of semiconductors for beginning engineering graduate students. Crystal structure. Reciprocal lattice and crystal diffraction. Electrons in periodic structures. Energy and bands. Semiconductor electrons and probes, fermi statistics.
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Phonons, electron scattering, electro nic transport, selected optical properties, heterostructures, effective mass, quantum wells, two-dimensional electron gas, quantum wires, deep levels, crystal binding.
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Matrices and tensors, stress deformation and flow, compatibility conditions, constitutive equations, field equations and boundary conditionsin fluids and solids, applications in solid and fluid mechanics.
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Topics in structure determination: structure factors, integrated intensities, data collection, the phase problem, patterson synthesis, direct methods, structure refinement, Debye-Waller factors, thermal diffuse scattering and extinction. Rietveld analysis of powder diffraction data. Synchrotron x-rays, neutron diffraction, electron diffraction, non-crystalline materials.
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Diffraction theory: fourier transformation, schrodinger equation, Maxwell'sequations, kinematical theory, Fresnel diffraction, Fraunhofer diffraction, scattering of x-rays, electrons and neutrons by isolated atoms and assemblies of atoms, pair correlation and radial distribution functions. Basic symmetry operations, point groups, space groups.
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Focuses on modern diffraction techniques from crystalline materials. High resolution x-ray diffraction. Analysis of epitaxial layers. X-ray scattering theory. Simulation of x-ray rocking curves. Analysis of thin films and multiple layers. Triple-axis x-ray diffractometry. Topography. Synchrotron techniques.
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Exposes students to practical aspects of powder and single crystal X-ray diffraction, including the determination and refinement of crystal structures.
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Electron microscopy to study defect structures, elastic and inelastic scattering, kinematics theory of image contrast, bright and dark field imaging, two-beam conditions, contrast from imperfections, dynamical theory of diffraction and image contrast. Howie Whellan equations, dispersion surface.
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Laboratory course with lecture component. Topics include: TEM alignment; basic functions; eletctron diffraction and reciprocal space; basic imaging; bright field and dark field; diffraction contrast; quantitative analysis of defects; HRTEM imaging and simulation. Involves TEM sample preparation.
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Wave-particle duality; bound states; uncertainty relations; expectation values and operators; variational principle; eigenfunction expansions; perturbation theory I. Treatment matches needs and background of ECE and materials students emphasizing solid state or quantum electronics.
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Continuation of Materials 211A; symmetry and degeneracy; electrons in crystals, angular momentum; perturbation theory II; transition probabilities; quantized fields and radiative transitions; magnetic fields;electron spin; indistinguishable particles.
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Application of the principles of statistical mechanics and thermodynamics to treat classical fluid systems at equilibrium. Topics include liquid state theory, computer simulation methods, critical phenomena and scaling principles, interfacial statistical mechanics, and electrolyte theory.
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Intensive theoretical and laboratory instruction in solid-state device and integrated circuit fabrication. Topics include 1) semiconductor material properties and characterization; 2) phase diagrams; 3) diffusion; 4) thermal oxidation; 5) vacuum processes; 6) thin-film deposition; 7) scanning electron microscopy. Both gallium arsenide and silicon technologies are presented.
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Continued theoretical and laboratory instruction and the characterization of junction and field-effect devices. Topics will include bipolar characterization, design fabrication, and testing. The laboratory effort initiated in 215A will be continued in these two quarters.
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Continued theoretical and laboratory instruction and the characterization of junction and field-effect devices. Topics will include bipolar characterization, design fabrication, and testing. The laboratory effort initiated in 215A will be continued in these two quarters.
Score: 4.808741 Details | Listing | Web page
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